Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature
نویسندگان
چکیده
A brief review of the main physical results about the low temperature characterization and modeIing of Si CMOS devices is presented. More specifically, the carrier mobility law. the saturation velocity, the short channel effects, the impact ionization phenomenon. the hot carrier effects or the parasitic leakage current are physically discussed.
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